ausgewählte Veröffentlichungen

• Abschnitt eines Buches

  • Bauelementesimulation zum Entwurf eines vertikalen GaN-MOSFET mit einer Durchbruchspannung von 1 kV

• Konferenz-Paper

  • Influence of Ionization Modelling for Mg-doped GaN on Transfer and Breakdown Characteristics of Vertical GaN-MOSFET 2016
  • Investigation of vertical GaN-MOSFET breakdown effects by device simulation 2015
  • Mobility and strain effects for <100> and <110> oriented silicon and SiGe transistor channels 2012
  • Suppression of the corner effects in a 22 nm hybrid tri-gate/planar process 2011
  • Optimization of Stressor Overlayer Parameters for MOSFET's in "Cool Silicon" – Technologies 2010
  • Analyse und Optimierung von verspannten Schichten auf CMOS–Transistoren
  • GaN-Bauelementekonzepte für den Einsatz in Hochspannungsanwendungen
  • Simulation and Optimization of Tri-Gates in a 22nm Hybrid Tri-Gate/Planar Process

• Konferenz-Poster

  • Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications 2019

• Konferenzband

  • Message from Conference Chairs.  The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings, pp. viii-viii. 2021
  • Strained isolation oxide as novel overall stress element for Tri-Gate transistors of 22nm CMOS and beyond.  2012 International Semiconductor Conference Dresden-Grenoble (ISCDG), pp. 61-63. 2012
  • Study of 22/20nm Tri-Gate transistors compatible in a low-cost hybrid FinFET/planar CMOS process.  2011 International Semiconductor Device Research Symposium (ISDRS), pp. 1-2. 2011

• Sonstiger Publikationstyp

  • Entwicklung von energieeffizienten Hochleistungstransistoren.  WissenD das Magazin der Hochschule für Technik und Wirtschaft Dresden , Vol.20(2), pp. 20-23. 2012

• Wissenschaftlicher Artikel

  • Stress Memorization Technique for n-MOSFETs: Where is the Stress Memorized? 2010
  • Detailed simulation study of embedded SiGe and Si:C S/D stressors in nano scaled SOI MOSFETs 2010
  • Effect of source/drain extension dopant species on device performance of non-diffuse embedded SiGe strained SOI P-MOSFETs. 2010
  • Simulation of asymmetric doped high performance SOI MOSFETs for VLSI CMOS technologies 2010
  • Understanding strain-induced drive-current enhancement in strained-silicon n-MOSFET and p-MOSFET. 2010