ausgewählte Veröffentlichungen

• Artikel

  • Channel Engineering for Nanotransistors in a Semiempirical Quantum Transport Model.  Mathematics (Basel), Vol.5(4), p. 68.  2017
  • Stress Memorization Technique for n-MOSFETs: Where is the Stress Memorized? 2010
  • Detailed simulation study of embedded SiGe and Si:C S/D stressors in nano scaled SOI MOSFETs 2010
  • Effect of source/drain extension dopant species on device performance of non-diffuse embedded SiGe strained SOI P-MOSFETs. 2010
  • Simulation of asymmetric doped high performance SOI MOSFETs for VLSI CMOS technologies 2010
  • Understanding strain-induced drive-current enhancement in strained-silicon n-MOSFET and p-MOSFET. 2010