ausgewählte Veröffentlichungen

• Tagungsband

  • Strained isolation oxide as novel overall stress element for Tri-Gate transistors of 22nm CMOS and beyond.  2012 International Semiconductor Conference Dresden-Grenoble (ISCDG), pp. 61-63. 2012
  • Study of 22/20nm Tri-Gate transistors compatible in a low-cost hybrid FinFET/planar CMOS process.  2011 International Semiconductor Device Research Symposium (ISDRS), pp. 1-2. 2011