A comprehensive physics-based power MOSFET model in VHDL-AMS for circuit simulations Tagungsband uri icon

Open Access

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Peer Reviewed

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Abstract

  • This paper presents a comprehensive Power MOSFET model for system and circuit simulation and its implementation in VHDL-AMS. The equation set features a non-quasi-static description of the body diode, a charge model for the inner MOSFET, self-heating and the inclusion of major parasitics. A comparison between simulation and measurement proves the good quality obtained.

Veröffentlichungszeitpunkt

  • August 1, 2011